=_ f?e an amp company wireless bipolar power transistor, 1 ow 1.45 - 1.60 ghz phl516-10 v2.00 features izs l designed for cellular base station applications l class ab: -33 dbc typ 3rd imd at 10 watts pep l class a: +49 dbm typ 3rd order intercept point l common emitter configuration l internal input impedance matching l diffused emitter ballasting absolute maximum ratings at 25c electrical characteristics at 25c inches mo5 unless uthervise noted, tolerances are wireless bipolar power transistor, 1 ow PH1516-10 v2.00 rf test fixture input 50 ohms "cc gd q c5 q c3 el 512 uutput 50 ohms artwork dimensions in mils cl c2 c3 c4 c5 cr1 ql rl rll board type: 33 pf atc size a 4,7 uf 35 volt chip 50 uf 50 volts ln4245 diode PH1516-10 5 ohms l/4 watt 6t/no, 24 awg dn 3 ohm l/4 watt rogers 6010,5 ,025" thick, er = 1005 specifications subject to change wtihout notice. 9-151 m/a-com, inc. north america: tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 s europe: tel. +44 (1344) 869 595 fax (800) 618-8863 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
wireless bipolar power transistor, 1 ow PH1516-10 v2.00 typical broadband performance curves gain-efficiency vs frequency output power vs collector voltage po,ilo w vcc=25 v i,,=1 00 ma 65 - -- 1.45 1.50 1.55 1.60 frequency (ghz) gain vs pout f-l 500 mhz vp,=25 v 17 , "i i =l.oa i 26 28 30 32 34 36 38 40 42 p,, kjw i,,=1 00 ma f=l500 mhz 21 v 12 16 20 24 20 collector voltage (v) 3rd order imd vs p,,, f1=1500.0 mhz f2=1500.1 mhz v,,=25 v -15 i -60 26 28 30 32 34 36 38 40 42 p&pep) in dbm imd vs p,,, imd vs p,?, fl =1500.0 mhz f2=1500.1 mhz vcc=25 v i,,=1 00 ma f1=1500.0 mhz f2=1500.1 mhz vc,=25 v ico=l .o a - 2.7 -15 . 2.7 class a6 class a 3rd 1.8 ,::pq;; 26 28 30 32 34 36 38 40 42 26 28 30 32 34 36 38 40 42 p&pep) in dbm p,,(pep) in dbm specifications subject to change without notice. 9-152 north america: tel. (800) 366-2266 h asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. m europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
wireless bipolar power transistor, 1 ow PH1516-10 v2.00 typical s-parameters v,,=25 v, l,,=l.o a f(mhz) 100 200 300 - ,400 500 600 700 800 900 1000 1100 1200 1300 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2100 2200 2300 2400 sll s21 s12 s22 mag phase mag phase mag phase mag phase 0.85 177.3 6.57 . 92.2 0.0066 6.74 0.73 -179.3 0.94 179.4 2.96 79.9 0.0073 4.33 0.73 -179.0 0.96 -179.4 1.95 75.5 0.0075 4.04 0.72 -178.8 0.97 -170.0 1.51 70.6 0.0077 0.91 0.72 -178.2 0.97 178.5 1.27 65.2 0.0081 -0.99 0.72 -177.6 0.97 178.1 1.12 59.5 0.0085 -2.6 0.73 -177.1 0.96 177.7 1.09 52.7 0.0088 - 6.8 0.72 -176.1 0.97 178.0 0.93 39.5 0.0094 -12.0 0.73 -174.5 0.96 177.3 0.88 34.6 0.0093 -13.3 0.75 -173.4 0.97 176.7 0.87 27.8 0.0102 -17.8 0.76 -172.3 0.95 175.9 0.96 20.7 0.0126 -24.5 0.76 -170.1 0.93 176.0 0.93 4.1 0.0118 -40.0 0.81 -169.0 0.92 176.3 0.96 -9.2 0.0118 -51.4 0.86 -168.9 0.91 176.9 0.98 -25.3 0.0120 - 68.5 0.91 -169.8 0.91 177.1 0.97 -34.4 0.0118 - 79.3 0.94 -171.1 0.91 177.6 0.95 -43.8 0.0117 - 91.4 0.97 -172.7 0.91 177.9 0.91 -53.8 0.0114 -104.9 0.98 -174.6 0.92 178.1 0.87 -63.4 0.0107 -119.8 0.99 -176.7 0.92 178.3 0.81 -72.7 0.0094 -135.3 0.99 -178.9 0.93 178.1 0.74 -81.2 0.0094 -146.9 0.01 179.0 0.94 178.0 0.67 -89.1 0.0084 -161.9 0.99 177.4 0.95 177.6 0.61 -96.7 0.0080 -174.5 0.98 175.8 0.95 177.1 0.55 -103.2 0.0079 -172.2 0.96 174.7 0.95 176.7 0.49 -108.6 0.0077 -155.4 0.95 173.8 0.96 176.1 0.44 -113.4 0.0071 145.8 0.94 173.1 0.96 175.6 0.40 -117.3 0.0070 134.9 0.92 172.2 0.96 174.3 0.34 -125.5 0.0081 123.6 0.91 171.0 0.96 173.1 0.28 -133.5 0.0087 104.9 0.84 169.3 0.96 171.7 0.23 -140.0 0.0092 89.0 0.88 168.7 0.96 170.5 0.20 -144.5 0.0075 80.1 0.86 168.0 specifications subject to change without notice. m/a-com, inc. 9-153 north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 w europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44(1344)300 020
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